国家/地区 Usa（2）
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作者 YOO WJ（2）

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

ACS NANO

LEE GH, YU YJ, CUI X, PETRONE N, LEE CH, CHOI MS, LEE DY, LEE C, YOO WJ, WATANABE K, TANIGUCHI T, NUCKOLLS C, KIM P, HONE J

High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide

NATURE ELECTRONICS

CHOI MS, NIPANE A, KIM BSY, ZIFFER ME, DATTA I, BORAH A, JUNG YH, KIM B, RHODES D, JINDAL A, LAMPORT ZA, LEE M, ZANGIABADI A, NAIR MN, TANIGUCHI T, WATANABE K, KYMISSIS I, PASUPATHY AN, LIPSON M, ZHU XY, YOO WJ, HONE J, TEHERANI JT