国家/地区 | |
关键词 | GRAPHENE(2) |
出版物 |
IEEE TRANSACTIONS ON ELECTRON DEVICES(2)![]() |
出版时间 | |
机构 | |
作者 |
YU HY(2)![]() |
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates
IEEE TRANSACTIONS ON ELECTRON DEVICES
ZHOU GN, WAN ZY, YANG GY, JIANG Y, SOKOLOVSKIJ R, YU HY, XIA GR
IEEE TRANSACTIONS ON ELECTRON DEVICES
LIU WJ, SUN XW, TRAN XA, FANG Z, WANG ZR, WANG F, WU L, ZHANG JF, WEI J, ZHU HL, YU HY