国家/地区 China（4）
关键词 SCHOTTKY BARRIER（3） ELECTRONIC STRUCTUR.（2）
出版物
出版时间 2018（2）
机构 HENAN NORMAL UNIV（4）
作者 ZHANG F（4）

Strain effects on the Schottky contacts of graphene and MoSe2 heterobilayers

PHYSICA ELOWDIMENSIONAL SYSTEMS NANOSTRUCTURES

ZHANG F, LI W, MA YQ, DAI XQ

Schottky barrier tuning of the graphene/SnS2 van der Waals heterostructures through electric field

SOLID STATE COMMUNICATIONS

ZHANG F, LI W, MA YQ, DAI XQ

Tuning the Schottky contacts at the graphene/WS2 interface by electric field

RSC ADVANCES

ZHANG F, LI W, MA YQ, TANG YN, DAI XQ

Effects of interlayer coupling on the electronic structures of antimonene/graphene van der Waals heterostructures

SUPERLATTICES MICROSTRUCTURES

ZHANG F, LI W, DAI XQ