国家/地区 Singapore（3）
关键词 MEMORY DEVICE（4）
出版物 SMALL（2）
出版时间 2012（2） 2013（2）
机构 NANYANG TECH.（3）
作者 ZHANG H（4）

Memory Devices Using a Mixture of MoS2 and Graphene Oxide as the Active Layer

SMALL

YIN ZY, ZENG ZY, LIU JQ, HE QY, CHEN P, ZHANG H

Fabrication of Flexible, All-Reduced Graphene Oxide Non-Volatile Memory Devices

ADVANCED MATERIALS

LIU JQ, YIN ZY, CAO XH, ZHAO F, WANG LH, HUANG W, ZHANG H

Preparation of MoS2-Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes

SMALL

LIU JQ, ZENG ZY, CAO XH, LU G, WANG LH, FAN QL, HUANG W, ZHANG H

Chemoselective Photodeoxidization of Graphene Oxide Using Sterically Hindered Amines as Catalyst: Synthesis and Applications

ACS NANO

ZHAO F, LIU JQ, HUANG X, ZOU X, LU G, SUN PJ, WU SX, AI W, YI MD, QI XY, XIE LH, WANG JL, ZHANG H, HUANG W