国家/地区 Sweden（3） China（2）
关键词
出版物 APPLIED PHYSICS LETTERS（5）
出版时间 2020（2）
机构 UPPSALA UNIV（3） CHINESE ACAD.（2）
作者 ZHANG SL（5）

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020)

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

APPLIED PHYSICS LETTERS

CHEN Y, ZANG H, JIANG K, BEN JW, ZHANG SL, SHI ZM, JIA YP, LU W, SUN XJ, LI DB

A graphene field-effect capacitor sensor in electrolyte

APPLIED PHYSICS LETTERS

CHEN S, ZHANG ZB, MA LP, AHLBERG P, GAO XD, QIU ZJ, WU DP, REN WC, CHENG HM, ZHANG SL

Minimizing sputter-induced damage during deposition of WS2 onto graphene

APPLIED PHYSICS LETTERS

JOHANSSON FOL, AHLBERG P, JANSSON U, ZHANG SL, LINDBLAD A, NYBERG T

A two-in-one process for reliable graphene transistors processed with photo-lithography

APPLIED PHYSICS LETTERS

AHLBERG P, HINNEMO M, SONG M, GAO X, OLSSON J, ZHANG SL, ZHANG ZB