Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy
APPLIED SURFACE SCIENCE
SU J, LIANG DD, ZHAO Y, YANG JK, CHANG HL, DUAN RF, WANG JX, SUN LF, WEI TB
AIP ADVANCES
ZHAO Y, CHEN LW, MENG YD
RSC ADVANCES
SONG WC, HU J, ZHAO Y, SHAO DD, LI JX
RSC ADVANCES
XU XJ, XING S, XU MJ, FU P, GAO TT, ZHANG XK, ZHAO Y, ZHAO C
INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE
ZHAO Y, CHEN LW, MENG YD
SMALL
WANG NN, GUAN B, ZHAO Y, ZOU Y, GENG GW, CHEN PL, WANG FY, LIU MH
ADVANCED ENERGY MATERIALS
ZHAO Y, ZHU JJ, ONG SJH, YAO QQ, SHI XL, HOU K, XU ZCJ, GUAN LH
CHINESE JOURNAL OF POLYMER SCIENCE
WEI ZB, ZHAO Y, WANG C, KUGA S, HUANG Y, WU M
CHEMICAL ENGINEERING JOURNAL
MO RJ, ZHAO Y, ZHAO MM, WU M, WANG C, LI JP, KUGA S, HUANG Y
ADVANCED OPTICAL MATERIALS
CHENG L, JIN ZM, MA ZW, SU FH, ZHAO Y, ZHANG YZ, SU TY, SUN Y, XU XL, MENG Z, BIAN YC, SHENG ZG