国家/地区 China（2）
关键词 4HSIC（3）
出版物
出版时间 2019（3）
机构
作者

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC

SEMICONDUCTORS

ELISEYEV IA, DAVYDOV VY, SMIRNOV AN, NESTOKLON MO, DEMENTEV PA, LEBEDEV SP, LEBEDEV AA, ZUBOV AV, MATHEW S, PEZOLDT J, BOKAI KA, USACHOV DY

Preparation of SiC/SiNWs/graphene heterojunction on 4H-SiC(0001)

OPTOELECTRONICS ADVANCED MATERIALSRAPID COMMUNICATIONS

CHEN H, LEI QQ, LI LB, ZANG Y, ZHANG GQ, XIA CJ, DAI CH, CHO JH

Characteristics of graphene/4H-SiC/graphene photodetector based on hydrogenated multilayer-graphene electrode

JOURNAL OF NANOPHOTONICS

SUN CZ, CAI WW, HONG RD, CAI JF, WU ZY