国家/地区 Usa（3）
关键词 ACCESS RESISTANCE（5）
出版物
出版时间 2016（2）
机构 FLORIDA INT .（2）
作者 ALAMIN C（2） KARABIYIK M（2） PALA N（2）

Dual-Gate Graphene FETs With f(T) of 50 GHz

IEEE ELECTRON DEVICE LETTERS

LIN YM, CHIU HY, JENKINS KA, FARMER DB, AVOURIS P, VALDESGARCIA A

A Novel approach to fabricate self-aligned graphene transistor

ELECTRONICS LETTERS

ZENG RZ, LI P, LI JH, LIAO YB, ZHANG QW, XIE XD

Fabrication of Graphene Field-effect Transistor with Field Controlling Electrodes to improve f(T)

MICROELECTRONIC ENGINEERING

ALAMIN C, KARABIYIK M, PALA N

Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance

NANOMATERIALS

ALAMIN C, KARABIYIK M, VABBINA PK, SINHA R, PALA N

Resistance analysis and device design guideline for graphene RF transistors

2D MATERIALS

HONG SK, JEON SC, HWANG WS, CHO BJ