国家/地区 China（4） Korea（3）
关键词 ALGAN/GAN（9）
出版物 IEEE ELECTRON DEVIC.（2） JOURNAL OF NANOSCIE.（2）
出版时间 2016（2） 2017（2）
机构 CHINESE ACAD.（2） HANYANG UNIV（2）
作者 CHO I（2） HAN S（2） PARK J（2）

Effect of fluorinated graphene insulator on AlGaN/GaN MIS-HEMTs as gate dielectric

DIAMOND RELATED MATERIALS

DING XY, SONG L, HE T, SUN C, CAI Y, ZENG CH, ZHANG K, ZHANG XD, ZHANG XP, ZHANG BS

Graphene/p-AlGaN/p-GaN electron tunnelling light emitting diodes with high external quantum efficiency

NANO ENERGY

FENG SR, DONG BZ, LU YH, YIN LF, WEI BL, WANG JB, LIN SS

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

ZHANG GB, ZHAO M, YAN CL, SUN B, WU ZG, CHANG HD, JIN Z, SUN J, LIU HG

Impact of 2D-Graphene on SiN Passivated AlGaN/GaN MIS-HEMTs Under Mist Exposure

IEEE ELECTRON DEVICE LETTERS

ROMERO MF, BOSCA A, PEDROS J, MARTINEZ J, FANDAN R, PALACIOS T, CALLE F

Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation

IEEE ELECTRON DEVICE LETTERS

SHEN LY, ZHANG DL, CHENG XH, ZHENG L, XU DW, WANG Q, LI JJ, CAO D, YU YH

Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KIM YH, HAN S, CHO I, LEE J, PARK J

Graphene/Al2O3/AlGaN/GaN Schottky MISIM Diode for Sensing Double UV Bands

IEEE SENSORS JOURNAL

SEOL JH, KANG SB, LEE CJ, WON CH, PARK H, LEE JH, HAHM SH

Effects of Plasma Treatment on the Electrical Properties of AlGaN/GaN Schottky Diodes with Graphene/Ni/Au Electrodes

NANOSCIENCE NANOTECHNOLOGY LETTERS

HAN S, CHO I, KIM H, MAGESHWARI K, PARK J

Graphene/AlGaN/GaN RF Switch

MICROMACHINES

YASHCHYSHYN Y, BAJURKO P, SOBOLEWSKI J, SAI P, PRZEWLOKA A, KRAJEWSKA A, PRYSTAWKO P, DUB M, KNAP W, RUMYANTSEV S, CYWINSKI G