国家/地区 China（4）
关键词 ALGAN/GAN（4）
出版物
出版时间
机构 CHINESE ACAD.（2）
作者

Effect of fluorinated graphene insulator on AlGaN/GaN MIS-HEMTs as gate dielectric

DIAMOND RELATED MATERIALS

DING XY, SONG L, HE T, SUN C, CAI Y, ZENG CH, ZHANG K, ZHANG XD, ZHANG XP, ZHANG BS

Graphene/p-AlGaN/p-GaN electron tunnelling light emitting diodes with high external quantum efficiency

NANO ENERGY

FENG SR, DONG BZ, LU YH, YIN LF, WEI BL, WANG JB, LIN SS

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistors with Graphene

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

ZHANG GB, ZHAO M, YAN CL, SUN B, WU ZG, CHANG HD, JIN Z, SUN J, LIU HG

Performance Improvement and Current Collapse Suppression of Al2O3/AlGaN/GaN HEMTs Achieved by Fluorinated Graphene Passivation

IEEE ELECTRON DEVICE LETTERS

SHEN LY, ZHANG DL, CHENG XH, ZHENG L, XU DW, WANG Q, LI JJ, CAO D, YU YH