国家/地区 Usa（6） China（3） Iran（2）
关键词 AMBIPOLAR（14）
出版物 NANO LETTERS（3）
出版时间 2016（3） 2011（2） 2012（2） 2015（2） 2019（2）
机构 ISLAMIC AZAD.（2）
作者 GHOREISHI SS（2） MOON JS（2） MORAVVEJFARS.（2） SAGHAFI K（2）
TANG QX（2）

Air-Stable Symmetric Ambipolar Field-Effect Transistors Based on Reduced Graphene Oxide-OTS Self-Assembled Monolayer Heterostructure

CHEMNANOMAT

PENG P, LIU HT, WU B, TANG QX, LIU YQ

Suppressing Ambipolar Characteristics of WSe2 Field Effect Transistors Using Graphene Oxide

ADVANCED ELECTRONIC MATERIALS

OH HM, PARK C, BANG S, YUN SJ, DUONG NT, JEONG MS

A NOVEL GRAPHENE NANO-RIBBON FIELD EFFECT TRANSISTOR WITH SCHOTTKY TUNNELING DRAIN AND OHMIC TUNNELING SOURCE

MODERN PHYSICS LETTERS B

GHOREISHI SS, SAGHAFI K, MORAVVEJFARSHI MK

Graphene-Based Frequency Tripler

NANO LETTERS

CHEN HY, APPENZELLER J

Graphene field-effect transistor for radio-frequency applications : review

CARBON LETTERS

MOON JS

Graphene: Its Fundamentals to Future Applications

IEEE TRANSACTIONS ON MICROWAVE THEORY TECHNIQUES

MOON JS, GASKILL DK

Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

IEEE TRANSACTIONS ON ELECTRON DEVICES

NAYFEH OM

Triple-Mode Single-Transistor Graphene Amplifier and Its Applications

ACS NANO

YANG XB, LIU GX, BALANDIN AA, MOHANRAM K

A frequency multiplier using three ambipolar graphene transistors

MICROELECTRONICS JOURNAL

KABIR HMD, SALAHUDDIN SM

A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

SUPERLATTICES MICROSTRUCTURES

GHOREISHI SS, SAGHAFI K, YOUSEFI R, MORAVVEJFARSHI MK