国家/地区 China（2） Germany（2）
关键词 AMORPHOUS SILICON（6）
出版物
出版时间 2016（2） 2018（2）
机构
作者 ALBERT M（2） CHAVARIN CA（2） STROBEL C（2） WENGER C（2）

A reverse hysteresis effect of graphene transistors with amorphous silicon gate dielectric

MICROELECTRONICS RELIABILITY

ZHANG QW, LI P, LIAO YB, WANG G, ZENG RZ, WANG H

Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode

MATERIALS

CHAVARIN CA, STROBEL C, KITZMANN J, DI BARTOLOMEO A, LUKOSIUS M, ALBERT M, BARTHA JW, WENGER C

Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures

JOURNAL OF PHYSICSCONDENSED MATTER

AREZKI H, BOUTCHICH M, ALAMARGUY D, MADOURI A, ALVAREZ J, CABARROCAS PRI, KLEIDER JP, YAO F, LEE YH

Silicon/Wolfram Carbide@Graphene composite: enhancing conductivity and structure stability in amorphous-silicon for high lithium storage performance

ELECTROCHIMICA ACTA

SUN W, HU RZ, LIU H, ZHANG HY, LIU JW, YANG LC, WANG HH, ZHU M

Glassy Metal Alloy Nanofiber Anodes Employing Graphene Wrapping Layer: Toward Ultralong-Cycle-Life Lithium-Ion Batteries

ACS NANO

JUNG JW, RYU WH, SHIN J, PARK K, KIM ID

Enhanced Electrical Properties of Optimized Vertical Graphene-Base Hot Electron Transistors

ACS APPLIED ELECTRONIC MATERIALS

STROBEL C, CHAVARIN CA, VOLKEL S, JAHN A, HIESS A, KNAUT M, ALBERT M, WENGER C, STEINKE O, STEPHAN U, ROHLECKE S, MIKOLAJICK T