国家/地区 Singapore（3）
关键词 BAND GAP（3）
出版物
出版时间
机构 NANYANG TECH.（2）
作者

Electronic structure of graphene- and BN-supported phosphorene

PHYSICA BCONDENSED MATTER

DAVLETSHIN AR, USTIUZHANINA SV, KISTANOV AA, SAADATMAND D, DMITRIEV SV, ZHOU K, KORZNIKOVA EA

Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening

ACS NANO

NI ZH, YU T, LU YH, WANG YY, FENG YP, SHEN ZX

Electronic properties of mutually embedded h-BN and graphene: A first principles study

CHEMICAL PHYSICS LETTERS

YU ZG, ZHANG YW