国家/地区 Japan（2）
关键词 BAND GAP（6）
出版物 ACS NANO（2） NANO LETTERS（2）
出版时间 2011（6）
机构
作者

Electrically Controlled Adsorption of Oxygen in Bilayer Graphene Devices

NANO LETTERS

SATO Y, TAKAI K, ENOKI T

High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants

NANO LETTERS

SZAFRANEK BN, SCHALL D, OTTO M, NEUMAIER D, KURZ H

Ultrasonic wave characteristics of a monolayer graphene on silicon substrate

COMPOSITE STRUCTURES

NARENDAR S, MAHAPATRA DR, GOPALAKRISHNAN S

Semiconductor-Metal Transition and Band-Gap Tuning in Quasi-Free-Standing Epitaxial Bilayer Graphene on SiC

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN

SUGAWARA K, SATO T, KANETANI K, TAKAHASHI T

Disorder and Segregation in B-C-N Graphene-Type Layers and Nanotubes: Tuning the Band Gap

ACS NANO

MARTINS JD, CHACHAM H

Clar Sextet Analysis of Triangular, Rectangular, and Honeycomb Graphene Antidot Lattices

ACS NANO

PETERSEN R, PEDERSEN TG, JAUHO AP