国家/地区 Korea（6）
关键词 BARRISTOR（6）
出版物 NANOMATERIALS（2）
出版时间 2022（3） 2016（2）
机构
作者 CHUNG HJ（2） JHANG SH（2） JUNG J（2）

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

NANOTECHNOLOGY

HWANG WT, MIN M, JEONG H, KIM D, JANG J, YOO D, JANG Y, KIM JW, YOON J, CHUNG S, YI GC, LEE H, WANG G, LEE T

Optimization of graphene-MoS2 barristor by 3-aminopropyltriethoxysilane (APTES)

ORGANIC ELECTRONICS

SHIM J, PARK JH

Direct Determination of Field Emission across the Heterojunctions in a ZnO/Graphene Thin-Film Barristor

ACS APPLIED MATERIALS INTERFACES

MILLS EM, MIN BK, KIM SK, KIM SJ, KANG MA, SONG W, MYUNG S, LIM J, AN KS, JUNG J, KIM S

Low-Power Complementary Inverter Based on Graphene/Carbon-Nanotube and Graphene/MoS2 Barristors

NANOMATERIALS

SHIN DH, YOU YG, JO SI, JEONG GH, CAMPBELL EEB, CHUNG HJ, JHANG SH

Simulation of Figures of Merit for Barristor Based on Graphene/Insulator Junction

NANOMATERIALS

LEE JH, CHOI I, JEONG NB, KIM M, YU J, JHANG SH, CHUNG HJ

Schottky barrier height modulation and photoconductivity in a vertical graphene/ReSe2 vdW p-n heterojunction barristor

JOURNAL OF MATERIALS RESEARCH TECHNOLOGYJMR T

BACH TPA, JAFFERY SHA, NGUYEN DC, ALI A, HUSSAIN S, HUSSAIN M, SEO Y, JUNG J