国家/地区 England（2） Korea（2）
关键词 BERNAL STACKING（10）
出版物 ACS NANO（2） NANO LETTERS（2）
出版时间 2011（2） 2015（2）
机构
作者 RASHIDIAN Z（2）

Gate-Controlled Conductance in ABA-Stacked Trilayer Graphene

IRANIAN JOURNAL OF SCIENCE TECHNOLOGY TRANSACTION ASCIENCE

AHMADZADEH N, RASHIDIAN Z, BAHARVAND A

Optical conductivity of ABA stacked graphene trilayer: mid-IR resonance due to band nesting

JOURNAL OF PHYSICSCONDENSED MATTER

RASHIDIAN Z, BLUDOV YV, RIBEIRO RM, PERES NMR, VASILEVSKIY MI

Reversible Loss of Bernal Stacking during the Deformation of Few-Layer Graphene in Nanocompo sites

ACS NANO

GONG L, YOUNG RJ, KINLOCH IA, HAIGH SJ, WARNER JH, HINKS JA, XU ZW, LI L, DING F, RIAZ I, JALIL R, NOVOSELOV KS

Kinetic Control of Catalytic CVD for High-Quality Graphene at Low Temperatures

ACS NANO

WEATHERUP RS, DLUBAK B, HOFMANN S

Magnetotransport Properties of Quasi-Free-Standing Epitaxial Graphene Bilayer on SiC: Evidence for Bernal Stacking

NANO LETTERS

LEE K, KIM S, POINTS MS, BEECHEM TE, OHTA T, TUTUC E

Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition

NANO LETTERS

YAN K, PENG HL, ZHOU Y, LI H, LIU ZF

Chemical Vapor Deposition of Bernal-Stacked Graphene on a Cu Surface by Breaking the Carbon Solubility Symmetry in Cu Foils

ADVANCED MATERIALS

YOO MS, LEE HC, LEE S, LEE SB, LEE NS, CHO K

Synthesis of few layer single crystal graphene grains on platinum by chemical vapour deposition

PROGRESS IN NATURAL SCIENCEMATERIALS INTERNATIONAL

KARAMAT S, SONUSEN S, CELIK U, UYSALLI Y, OZGONUL E, ORAL A

Self-organized metal-semiconductor epitaxial graphene layer on off-axis 4H-SiC(0001)

NANO RESEARCH

PIERUCCI D, SEDIRI H, HAJLAOUI M, VELEZFORT E, DAPPE YJ, SILLY MG, BELKHOU R, SHUKLA A, SIROTTI F, GOGNEAU N, OUERGHI A

Strain-induced doping and zero line mode at the fold of twisted Bernal-stacked bilayer graphene

2D MATERIALS

HONG SJ, XIAO X, WULFERDING D, BELKE C, LEMMENS P, HAUG RJ