国家/地区 Usa（2）
关键词 BILAYER（3）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（3）
出版时间
机构
作者

Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES

LEE K, FALLAHAZAD B, MIN H, TUTUC E

Performance Characteristics of Scaled Bilayer Graphene Pseudospin Devices

IEEE TRANSACTIONS ON ELECTRON DEVICES

GILBERT MJ

An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

IEEE TRANSACTIONS ON ELECTRON DEVICES

AGUIRREMORALES JD, FREGONESE S, MUKHERJEE C, MANEUX C, ZIMMER T