国家/地区 Germany（2）
关键词 BUFFER LAYER（2）
出版物
出版时间
机构
作者 SEYLLER T（2）

Quasi-Freestanding Graphene on SiC(0001) by Ar-Mediated Intercalation of Antimony: A Route Toward Intercalation of High-Vapor-Pressure Elements

ANNALEN DER PHYSIK

WOLFF S, ROSCHER S, TIMMERMANN F, DANIEL MV, SPECK F, WANKE M, ALBRECHT M, SEYLLER T

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

2D MATERIALS

KRUSKOPF M, PAKDEHI DM, PIERZ K, WUNDRACK S, STOSCH R, DZIOMBA T, GOTZ M, BARINGHAUS J, APROJANZ J, TEGENKAMP C, LIDZBA J, SEYLLER T, HOHLS F, AHLERS FJ, SCHUMACHER HW