国家/地区 Korea（2）
关键词 CONTACT RESISTANCE（2）
出版物
出版时间
机构
作者 PARK S（2）

Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design

ADVANCED MATERIALS

PARK HY, JUNG WS, KANG DH, JEON J, YOO G, PARK Y, LEE J, JANG YH, LEE J, PARK S, YU HY, SHIN B, LEE S, PARK JH

Gradual Edge Contact between Mo and MoS2 Formed by Graphene-Masked Sulfurization for High-Performance Field-Effect Transistors

ACS APPLIED MATERIALS INTERFACES

LEE JH, SONG J, SHIN DH, PARK S, KIM HR, CHO SP, HONG BH