国家/地区
关键词 CUTOFF FREQUENCY（4）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（4）
出版时间 2013（3）
机构
作者

Graphene-Base Heterojunction Transistor: An Attractive Device for Terahertz Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

DI LECCE V, GRASSI R, GNUDI A, GNANI E, REGGIANI S, BACCARANI G

Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

ZEBREV GI, TSELYKOVSKIY AA, BATMANOVA DK, MELNIK EV

Ballistic I-V Characteristics of Short-Channel Graphene Field-Effect Transistors: Analysis and Optimization for Analog and RF Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

GANAPATHI K, YOON Y, LUNDSTROM M, SALAHUDDIN S

Analysis of Graphene Tunnel Field-Effect Transistors for Analog/RF Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

RAWAT B, PAILY R