国家/地区 Usa（5）
关键词 DOPANT（5）
出版物 NANO LETTERS（2）
出版时间 2013（2）
机构
作者

Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

NANO LETTERS

WANG F, LIU G, ROTHWELL S, NEVIUS M, TEJEDA A, TALEBIBRAHIMI A, FELDMAN LC, COHEN PI, CONRAD EH

Effect of defects and dopants in graphene on hydrogen interaction in graphene-supported NaAlH4

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY

XU LY, GE QF

Towards new graphene materials: Doped graphene sheets and nanoribbons

MATERIALS LETTERS

LV RT, TERRONES M

Raman characterization of defects and dopants in graphene

JOURNAL OF PHYSICSCONDENSED MATTER

BEAMS R, CANCADO LG, NOVOTNY L

Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene

NANO LETTERS

JOUCKEN F, BENA C, GE ZH, QUEZADALOPEZ E, PINON S, KALADZHYAN V, TANIGUCHI T, WATANABE K, FERREIRA A, JR JV