国家/地区 Singapore（4） Usa（3） Brazil（2） China（2）
Germany（2） Italy（2）
关键词 DOPING（22）
出版物 PHYSICAL REVIEW B（15） APPLIED PHYSICS LET.（4） SMALL（2）
出版时间 2009（22）
机构 NANYANG TECH.（3）
作者 LI LJ（3） SHI YM（3） BLAKE P（2） CHEN P（2）
DONG XC（2） FANG WJ（2） GEIM AK（2） NOVOSELOV KS（2）

Mapping the Dirac point in gated bilayer graphene

APPLIED PHYSICS LETTERS

DESHPANDE A, BAO W, ZHAO Z, LAU CN, LEROY BJ

Dynamical response functions and collective modes of bilayer graphene

PHYSICAL REVIEW B

BORGHI G, POLINI M, ASGARI R, MACDONALD AH

Doping dependence of the Raman peaks intensity of graphene close to the Dirac point

PHYSICAL REVIEW B

CASIRAGHI C

First-principles calculation of the electronic properties of graphene clusters doped with nitrogen and boron: Analysis of catalytic activity for the oxygen reduction reaction

PHYSICAL REVIEW B

HUANG SF, TERAKURA K, OZAKI T, IKEDA T, BOERO M, OSHIMA M, OZAKI J, MIYATA S

Graphene on Pt(111): Growth and substrate interaction

PHYSICAL REVIEW B

SUTTER P, SADOWSKI JT, SUTTER E

Effects induced by single and multiple dopants on the transport properties in zigzag-edged graphene nanoribbons

PHYSICAL REVIEW B

ZHENG XH, RUNGGER I, ZENG Z, SANVITO S

Noninvasive metal contacts in chemically derived graphene devices

APPLIED PHYSICS LETTERS

SUNDARAM RS, GOMEZNAVARRO C, LEE EJH, BURGHARD M, KERN K

Conductance distribution in doped and defected graphene nanoribbons

PHYSICAL REVIEW B

LA MAGNA A, DERETZIS I, FORTE G, PUCCI R

Photoelectrical Response in Single-Layer Graphene Transistors

SMALL

SHI YM, FANG WJ, ZHANG KK, ZHANG WJ, LI LJ

Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point

SOLID STATE COMMUNICATIONS

BLAKE P, YANG R, MOROZOV SV, SCHEDIN F, PONOMARENKO LA, ZHUKOV AA, NAIR RR, GRIGORIEVA IV, NOVOSELOV KS, GEIM AK