国家/地区 China（6） Usa（5） Korea（4） India（3）
关键词 DOPING（23）
出版物 ACS NANO（8） APPLIED PHYSICS LET.（3）
出版时间 2011（23）
机构 JAWAHARLAL N.（2）
作者 PARK J（2） RAO CNR（2）

Raman intensity of graphene

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

CASIRAGHI C

Enhanced Electrical Properties of Reduced Graphene Oxide Multi layer Films by In-Situ Insertion of a TiO2 Layer

ACS NANO

HAN JT, KIM BJ, KIM BG, KIM JS, JEONG BH, JEONG SY, JEONG HJ, CHO JH, LEE GW

Electronic structure tuning and band gap opening of graphene by hole/electron codoping

PHYSICS LETTERS A

DENG XH, WU YQ, DAI JY, KANG DD, ZHANG DY

Doping of graphene adsorbed on the a-SiO2 surface

APPLIED PHYSICS LETTERS

MIWA RH, SCHMIDT TM, SCOPEL WL, FAZZIO A

First-principles studies on doped graphene as anode materials in lithium-ion batteries

THEORETICAL CHEMISTRY ACCOUNTS

WU DH, LI YF, ZHOU Z

Single-walled carbon nanotubes and nanocrystalline graphene reduce beam-induced movements in high-resolution electron cryo-microscopy of ice-embedded biological samples

APPLIED PHYSICS LETTERS

RHINOW D, WEBER NE, TURCHANIN A, GOLZHAUSER A, KUHLBRANDT W

Monolayer graphene film/silicon nanowire array Schottky junction solar cells

APPLIED PHYSICS LETTERS

XIE C, LV P, NIE BA, JIE JS, ZHANG XW, WANG Z, JIANG P, HU ZZ, LUO LB, ZHU ZF, WANG L, WU CY

Excitonic Effects on Optical Absorption Spectra of Doped Graphene

NANO LETTERS

YANG L

Physical Insight Into Substitutional N-Doped Graphene Nanoribbons With Armchair Edges

IEEE TRANSACTIONS ON NANOTECHNOLOGY

YU SS, ZHENG WT, JIANG Q

Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

IEEE TRANSACTIONS ON ELECTRON DEVICES

NAYFEH OM