国家/地区 Germany（5）
关键词 DOPING（5）
出版物
出版时间 2014（5）
机构 TECH UNIV CH.（2）
作者 SEYLLER T（2）

Enhancing the Electrochemical and Electronic Performance of CVD-Grown Graphene by Minimizing Trace Metal Impurities

CHEMELECTROCHEM

IOST RM, CRESPILHO FN, ZUCCARO L, YU HK, WODTKE AM, KERN K, BALASUBRAMANIAN K

Emergence of Photoswitchable States in a Graphene-Azobenzene-Au Platform

NANO LETTERS

MARGAPOTI E, STROBEL P, ASMAR MM, SEIFERT M, LI J, SACHSENHAUSER M, CEYLAN O, PALMA CA, BARTH JV, GARRIDO JA, CATTANISCHOLZ A, ULLOA SE, FINLEY JJ

Polarization doping of graphene on silicon carbide

2D MATERIALS

MAMMADOV S, RISTEIN J, KOCH RJ, OSTLER M, RAIDEL C, WANKE M, VASILIAUSKAS R, YAKIMOVA R, SEYLLER T

Quasi-freestanding epitaxial graphene transistor with silicon nitride top gate

JOURNAL OF PHYSICS DAPPLIED PHYSICS

WEHRFRITZ P, FROMM F, MALZER S, SEYLLER T

Tunable D peak in gated graphene

NANO RESEARCH

OTT A, VERZHBITSKIY IA, CLOUGH J, ECKMANN A, GEORGIOU T, CASIRAGHI C