国家/地区 Vietnam（8）
关键词 ELECTRONIC PROPERTIE（8）
出版物
出版时间 2018（7）
机构 LE QUY DON T.（6）
作者 PHUC HV（8）

Opening a band gap in graphene by C-C bond alternation: a tight binding approach

MATERIALS RESEARCH EXPRESS

KHOA DQ, NGUYEN CV, BUI LM, PHUC HV, HOI BD, HIEU NV, NHA VQ, HUYNH N, NHAN LC, HIEU NN

First principles study on the electronic properties and Schottky barrier of Graphene/InSe heterostructure

SUPERLATTICES MICROSTRUCTURES

PHAM KD, HIEU NN, ILYASOV VV, PHUC HV, HOI BD, FEDDI E, THUAN NV, NGUYEN CV

First principles study of the electronic properties and Schottky barrier in vertically stacked graphene on the Janus MoSeS under electric field

COMPUTATIONAL MATERIALS SCIENCE

PHAM KD, HIEU NN, PHUC HV, HOI BD, ILYSOV VV, AMIN B, NGUYEN CV

Tuning the Electronic and Optical Properties of Two-Dimensional Graphene-like Nanosheet by Strain Engineering

JOURNAL OF ELECTRONIC MATERIALS

PHUC HV, TUAN VV, HIEU NN, ILYASOV VV, FEDOROV IA, HOI BD, PHUONG LTT, HIEU NV, FEDDI E, NGUYEN CV

Van der Waals graphene/g-GaSe heterostructure: Tuning the electronic properties and Schottky barrier by interlayer coupling, biaxial strain, and electric gating

JOURNAL OF ALLOYS COMPOUNDS

PHUC HV, ILYASOV VV, HIEU NN, AMIN B, NGUYEN CV

First-principles study of electronic properties of AB-stacked bilayer armchair graphene nanoribbons under out-plane strain

INDIAN JOURNAL OF PHYSICS

NGUYEN CV, HIEU NV, NHAN LC, PHUC HV, ILYASOV VV, HIEU NN

Electric-field tunable electronic properties and Schottky contact of graphene/phosphorene heterostructure

VACUUM

PHUC HV, ILYASOV VV, HIEU NN, NGUYEN CV

First principle study on the electronic properties and Schottky contact of graphene adsorbed on MoS2 monolayer under applied out-plane strain

SURFACE SCIENCE

PHUC HV, HIEU NN, HOI BD, PHUONG LTT, NGUYEN CV