国家/地区 Usa（3） China（2）
关键词 ELEMENTAL SEMICONDUCTOR（7）
出版物 APPLIED PHYSICS LET.（3） PHYSICAL REVIEW B（3）
出版时间 2009（7）
机构
作者

Polarization-induced switching effect in graphene nanoribbon edge-defect junction

JOURNAL OF CHEMICAL PHYSICS

YIN G, LIANG YY, JIANG F, CHEN H, WANG P, NOTE R, MIZUSEKI H, KAWAZOE Y

Graphene on gallium arsenide: Engineering the visibility

APPLIED PHYSICS LETTERS

FRIEDEMANN M, PIERZ K, STOSCH R, AHLERS FJ

Electronic properties of zigzag graphene nanoribbons on Si(001)

APPLIED PHYSICS LETTERS

ZHANG ZH, GUO WL

Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors

APPLIED PHYSICS LETTERS

TSENG F, UNLUER D, HOLCOMB K, STAN MR, GHOSH AW

Electronic structures of zigzag graphene nanoribbons with edge hydrogenation and oxidation

PHYSICAL REVIEW B

LEE G, CHO K

Optical response and excitons in gapped graphene

PHYSICAL REVIEW B

PEDERSEN TG, JAUHO AP, PEDERSEN K

Slow imbalance relaxation and thermoelectric transport in graphene

PHYSICAL REVIEW B

FOSTER MS, ALEINER IL