国家/地区 Usa（3） Republic（2）
关键词 EPITAXIAL GRAPHENE（5）
出版物 JOURNAL OF PHYSICS .（2） NANO LETTERS（2）
出版时间 2014（2）
机构 GEORGIA INST.（3）
作者 KUNC J（5）

The electroluminescent properties based on bias polarity of the epitaxial graphene/aluminium SiC junction

JOURNAL OF PHYSICS DAPPLIED PHYSICS

REJHON M, FRANC J, DEDIC V, HLIDEK P, KUNC J

Planar Edge Schottky Barrier-Tunneling Transistors Using Epitaxial Graphene/SiC Junctions

NANO LETTERS

KUNC J, HU YK, PALMER J, GUO ZL, HANKINSON J, GAMAL SH, BERGER C, DE HEER WA

Wafer bonding solution to epitaxial graphene-silicon integration

JOURNAL OF PHYSICS DAPPLIED PHYSICS

DONG R, GUO ZL, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, BHATTACHARYA SK, BERGER C, DE HEER WA

Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

NANO LETTERS

GUO ZL, DONG R, CHAKRABORTY PS, LOURENCO N, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, CRESSLER JD, BERGER C, DE HEER WA

Ultrafast Plasmon Thermalization in Epitaxial Graphene Probed by Time-Resolved THz Spectroscopy

ADVANCED FUNCTIONAL MATERIALS

PAINGAD VC, KUNC J, REJHON M, RYCHETSKY I, MOHELSKY I, ORLITA M, KUZEL P