国家/地区 Korea（2）
关键词 FERROELECTRIC（2）
出版物 JOURNAL OF NANOSCIENCE NANOTECHNOLOGY（2）
出版时间 2019（2）
机构 JEJU NATL UN.（2）
作者 KIM WY（2）

Characterization of a Ferroelectric-Gated Graphene Memory Device Fabricated on a Flexible Substrate by Transfer Process

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KHAN SA, JEONG HS, RAHMAN SA, BAE JH, KIM WY

Improved Retention Performance in Graphene-Ferroelectric Memory Device Through Mitigation of the Surface Roughness of the Ferroelectric Layer

JOURNAL OF NANOSCIENCE NANOTECHNOLOGY

KIM WY