国家/地区 Japan（2）
关键词 FET（5）
出版物 APPLIED PHYSICS EXP.（2）
出版时间 2020（5）
机构 UNIV TSUKUBA（2）
作者 GAO YL（2） MARUYAMA M（2） OKADA S（2）

Transitions in electrical behavior of Molecular Devices based on 1-D and 2-D graphene-phagraphene-graphene hybrid heterojunctions

MATERIALS CHEMISTRY PHYSICS

DOS SANTOS JCD, FERREIRA DFS, DA SILVA CAB, DEL NERO J

Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistors

APPLIED PHYSICS EXPRESS

OKADA S, MARUYAMA M, GAO YL

Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors

APPLIED PHYSICS EXPRESS

GAO YL, MARUYAMA M, OKADA S

Graphene bandgap induced by ferroelectric HfO2 doped with Zr (HfZrO)

NANOTECHNOLOGY

DRAGOMAN M, DINESCU A, NASTASE F, MOLDOVAN A, DRAGOMAN D

A compact and efficient graphene FET based RF energy harvester for green communication

AEUINTERNATIONAL JOURNAL OF ELECTRONICS COMMUNICATIONS

SINGH N, KUMAR S, KANAUJIA BK, BEG MT, MAINUDDIN, KUMAR S