国家/地区 Belgium（3）
关键词 FIELD EFFECT TRANSISTOR（3）
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Tunable 2D-gallium arsenide and graphene bandgaps in a graphene/GaAs heterostructure: an ab initio study

JOURNAL OF PHYSICSCONDENSED MATTER

GONZALEZGARCIA A, LOPEZPEREZ W, GONZALEZHERNANDEZ R, RODRIGUEZ JA, MILOSEVIC MV, PEETERS FM

Tunable n- and p-type doping of single-layer graphene by engineering its interaction with the SiO2 support

PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS

NOURBAKHSH A, CANTORO M, LI B, MULLER R, DE FEYTER S, HEYNS MM, SELS BF, DE GENDT S

Graphene based Van der Waals contacts on MoS(2)field effect transistors

2D MATERIALS

MOOTHERI V, ARUTCHELVAN G, BANERJEE S, SUTAR S, LEONHARDT A, BOULON ME, HUYGHEBAERT C, HOUSSA M, ASSELBERGHS I, RADU I, HEYNS M, LIN D