国家/地区 Usa（2）
关键词 FIELD EFFECT TRANSISTOR（2）
出版物
出版时间
机构 PENN STATE U.（2）
作者 SNYDER DW（2）

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Enhanced Transport and Transistor Performance with Oxide Seeded High-kappa Gate Dielectrics on Wafer-Scale Epitaxial Graphene

NANO LETTERS

HOLLANDER MJ, LABELLA M, HUGHES ZR, ZHU M, TRUMBULL KA, CAVALERO R, SNYDER DW, WANG XJ, HWANG E, DATTA S, ROBINSON JA