国家/地区 Pakistan（3）
关键词 FIELD EFFECT TRANSISTOR（3）
出版物
出版时间
机构 GIK INST ENGN SCI TECHNOL（3）
作者 IQBAL MW（3）

Formation of pn-Junction with Chemical Modification of Graphene-Hexagonal Boron Nitride Heterostructure

JOURNAL OF NANOELECTRONICS OPTOELECTRONICS

IQBAL MZ, KHAN A, KHAN S, ANWAR N, HAIDER SS, FAISAL MM, IQBAL MW, ALI A, IQBAL J, IQBAL MJ

Ultraviolet-light-driven enhanced photoresponse of chemical-vapor-deposition grown graphene-WS2 heterojunction based FETs

SENSORS ACTUATORS BCHEMICAL

SIDDIQUE S, IQBAL MZ, IQBAL MW, KHAN S

Formation of pn-junction with stable n-doping in graphene field effect transistors using e-beam irradiation

OPTICAL MATERIALS

IQBAL MZ, ANWAR N, SIDDIQUE S, IQBAL MW, HUSSAIN T