国家/地区 Usa（4）
关键词 FIELD EFFECT TRANSISTOR（4）
出版物 ACS NANO（2）
出版时间
机构 PENN STATE UNIV（4）
作者 CAVALERO R（2） HOLLANDER MJ（2） LABELLA M（2） ROBINSON JA（2）
SNYDER DW（2） TRUMBULL KA（2）

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Enhanced Transport and Transistor Performance with Oxide Seeded High-kappa Gate Dielectrics on Wafer-Scale Epitaxial Graphene

NANO LETTERS

HOLLANDER MJ, LABELLA M, HUGHES ZR, ZHU M, TRUMBULL KA, CAVALERO R, SNYDER DW, WANG XJ, HWANG E, DATTA S, ROBINSON JA

Unusual resistance hysteresis in n-layer graphene field effect transistors fabricated on ferroelectric Pb(Zr0.2Ti0.8)O-3

APPLIED PHYSICS LETTERS

HONG X, HOFFMAN J, POSADAS A, ZOU K, AHN CH, ZHU J

n-Type Behavior of Graphene Supported on Si/SiO2 Substrates

ACS NANO

ROMERO HE, SHEN N, JOSHI P, GUTIERREZ HR, TADIGADAPA SA, SOFO JO, EKLUND PC