国家/地区 Usa（4） Korea（2）
关键词 FIELD EFFECT TRANSISTOR（8）
出版物 ACS NANO（8）
出版时间 2012（3）
机构 PENN STATE U.（2）
作者

25 GHz Embedded-Gate Graphene Transistors with High-K Dielectrics on Extremely Flexible Plastic Sheets

ACS NANO

LEE J, HA TJ, LI HF, PARRISH KN, HOLT M, DODABALAPUR A, RUOFF RS, AKINWANDE D

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Si-Compatible Cleaning Process for Graphene Using Low-Density Inductively Coupled Plasma

ACS NANO

LIM YD, LEE DY, SHEN TZ, RA CH, CHOI JY, YOO WJ

The Application of Highly Doped Single-Layer Graphene as the Top Electrodes of Semitransparent Organic Solar Cells

ACS NANO

LIU ZK, LI JH, SUN ZH, TAI GA, LAU SP, YAN F

Reduced Graphene Oxide (rGO)-Wrapped Fullerene (C-60) Wires

ACS NANO

YANG J, HEO M, LEE HJ, PARK SM, KIM JY, SHIN HS

n-Type Behavior of Graphene Supported on Si/SiO2 Substrates

ACS NANO

ROMERO HE, SHEN N, JOSHI P, GUTIERREZ HR, TADIGADAPA SA, SOFO JO, EKLUND PC

Scalable Production of High-Sensitivity, Label-Free DNA Biosensors Based on Back-Gated Graphene Field Effect Transistors

ACS NANO

PING JL, VISHNUBHOTLA R, VRUDHULA A, JOHNSON ATC

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

ACS NANO

SHARMA P, BERNARD LS, BAZIGOS A, MAGREZ A, IONESCU AM