国家/地区 Korea（4） Usa（3） China（2）
关键词 FIELD EFFECT TRANSISTOR（11）
出版物 NANO LETTERS（11）
出版时间 2010（3） 2011（3） 2012（3）
机构 SUNGKYUNKWAN.（2）
作者 AHN JH（2） HONG BH（2） JANG H（2） ZHU HW（2）

Scalable Production of Highly Sensitive Nanosensors Based on Graphene Functionalized with a Designed G Protein-Coupled Receptor

NANO LETTERS

LERNER MB, MATSUNAGA F, HAN GH, HONG SJ, XI J, CROOK A, PEREZAGUILAR JM, PARK YW, SAVEN JG, LIU RY, JOHNSON ATC

Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors

NANO LETTERS

GUO ZL, DONG R, CHAKRABORTY PS, LOURENCO N, PALMER J, HU YK, RUAN M, HANKINSON J, KUNC J, CRESSLER JD, BERGER C, DE HEER WA

Current Saturation and Voltage Gain in Bilayer Graphene Field Effect Transistors

NANO LETTERS

SZAFRANEK BN, FIORI G, SCHALL D, NEUMAIER D, KURZ H

Solution-Gated Graphene Field Effect Transistors Integrated in Microfluidic Systems and Used for Flow Velocity Detection

NANO LETTERS

HE RX, LIN P, LIU ZK, ZHU HW, ZHAO XZ, CHAN HLW, YAN F

Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application

NANO LETTERS

KIM T, KIRN H, KWON SW, KIM Y, PARK WK, YOON DH, JANG AR, SHIN HS, SUH KS, YANG WS

Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates

NANO LETTERS

SVENSSON J, LINDAHL N, YUN H, SEO M, MIDTVEDT D, TARAKANOV Y, LINDVALL N, NERUSHEV O, KINARET J, LEE S, CAMPBELL EEB

Enhanced Transport and Transistor Performance with Oxide Seeded High-kappa Gate Dielectrics on Wafer-Scale Epitaxial Graphene

NANO LETTERS

HOLLANDER MJ, LABELLA M, HUGHES ZR, ZHU M, TRUMBULL KA, CAVALERO R, SNYDER DW, WANG XJ, HWANG E, DATTA S, ROBINSON JA

Electrically Controlled Adsorption of Oxygen in Bilayer Graphene Devices

NANO LETTERS

SATO Y, TAKAI K, ENOKI T

Controllable N-Doping of Graphene

NANO LETTERS

GUO BD, LIU QA, CHEN ED, ZHU HW, FANG LA, GONG JR

High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics

NANO LETTERS

KIM BJ, JANG H, LEE SK, HONG BH, AHN JH, CHO JH