国家/地区 China（5）
关键词 FIELDEFFECT TRANSISTOR FET（5）
出版物
出版时间 2013（2）
机构 CHINESE ACAD.（2）
作者

Graphene Electronics: Materials, Devices, and Circuits

PROCEEDINGS OF THE IEEE

WU YQ, FARMER DB, XIA FN, AVOURIS P

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

HU GX, HU SY, LIU R, WANG LL, ZHOU X, TANG TA

Top-gated graphene field-effect transistors on SiC substrates

CHINESE SCIENCE BULLETIN

MA P, JIN Z, GUO JN, PAN HL, LIU XY, YE TC, JIA YP, GUO LW, CHEN XL

Synthesis of large-area, few-layer graphene on iron foil by chemical vapor deposition

NANO RESEARCH

XUE YZ, WU B, GUO YL, HUANG LP, JIANG L, CHEN JY, GENG DC, LIU YQ, HU WP, YU G

Controlled Preparation and Device Application of Sub-5 nm Graphene Nanoribbons and Graphene Nanoribbon/Carbon Nanotube Intramolecular Heterostructures

ACS APPLIED MATERIALS INTERFACES

HE ZY, WANG K, YAN C, WAN LJ, ZHOU QP, ZHANG T, YE XW, ZHANG YM, SHI FY, JIANG SH, ZHAO J, WANG KC, CHEN CX