国家/地区 India（2）
关键词 FIELDEFFECT TRANSISTOR FET（2）
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A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor With NH3 Sensing Application

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHOURASIA NK, SINGH AK, RAI S, SHARMA A, CHAKRABARTI P, SRIVASTAVA A, PAL BN

A Surface Potential-Based Model for Dual Gate Bilayer Graphene Field Effect Transistor Including the Capacitive Effects

JOURNAL OF CIRCUITS SYSTEMS COMPUTERS

BARDHAN S, SAHOO M, RAHAMAN H