国家/地区
关键词 FIELDEFFECT TRANSISTOR FET（3）
出版物 IEEE ELECTRON DEVIC.（2）
出版时间 2012（3）
机构
作者

Graphene FET-Based Zero-Bias RF to Millimeter-Wave Detection

IEEE ELECTRON DEVICE LETTERS

MOON JS, SEO HC, ANTCLIFFE M, LIN S, MCGUIRE C, LE D, NYAKITI LO, GASKILL DK, CAMPBELL PM, LEE KM, ASBECK P

Top-gated graphene field-effect transistors on SiC substrates

CHINESE SCIENCE BULLETIN

MA P, JIN Z, GUO JN, PAN HL, LIU XY, YE TC, JIA YP, GUO LW, CHEN XL

Effect of Temperature and Humidity on NO2 and NH3 Gas Sensitivity of Bottom-Gate Graphene FETs Prepared by ICP-CVD

IEEE ELECTRON DEVICE LETTERS

KIM CH, YOO SW, NAM DW, SEO S, LEE JH