国家/地区 Spain（3）
关键词 FIELDEFFECT TRANSISTOR FET（8）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（8）
出版时间 2011（2） 2020（2）
机构 UNIV AUTONOM.（3）
作者 JIMENEZ D（3）

A Lithography-Free Fabrication of Low-Operating Voltage-Driven, Very Large Channel Length Graphene Field-Effect Transistor With NH3 Sensing Application

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHOURASIA NK, SINGH AK, RAI S, SHARMA A, CHAKRABARTI P, SRIVASTAVA A, PAL BN

Non-Quasi-Static Effects in Graphene Field-Effect Transistors Under High-Frequency Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Engineered Nanopores-Based Armchair Graphene Nanoribbon FET With Resonant Tunneling Performance

IEEE TRANSACTIONS ON ELECTRON DEVICES

RAHMANI M, AHMADI V, FAEZ R

A Comprehensive Graphene FET Model for Circuit Design

IEEE TRANSACTIONS ON ELECTRON DEVICES

RODRIGUEZ S, VAZIRI S, SMITH A, FREGONESE S, OSTLING M, LEMME MC, RUSU A

Quasi-Ballistic Transport Model for Graphene Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

HU GX, HU SY, LIU R, WANG LL, ZHOU X, TANG TA

Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D

Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications

IEEE TRANSACTIONS ON ELECTRON DEVICES

JIMENEZ D, MOLDOVAN O

Graphene Field-Effect Transistor Model With Improved Carrier Mobility Analysis

IEEE TRANSACTIONS ON ELECTRON DEVICES

TIAN J, KATSOUNAROS A, SMITH D, HAO Y