国家/地区
关键词 FIELDEFFECT TRANSISTORS FETS（4）
出版物 IEEE TRANSACTIONS ON ELECTRON DEVICES（4）
出版时间
机构
作者

Amplified Methanol Sensitivity in Reduced Graphene Oxide FET Using Appropriate Gate Electrostatic

IEEE TRANSACTIONS ON ELECTRON DEVICES

HAZRA A

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

CARRION EA, SEROV AY, ISLAM S, BEHNAM A, MALIK A, XIONG F, BIANCHI M, SORDAN R, POP E

A Semianalytical Model of Bilayer-Graphene Field-Effect Transistor

IEEE TRANSACTIONS ON ELECTRON DEVICES

CHELI M, FIORI G, IANNACCONE G

Enhanced High-Frequency Performance of Top-Gated Graphene FETs Due to Substrate- Induced Improvements in Charge Carrier Saturation Velocity

IEEE TRANSACTIONS ON ELECTRON DEVICES

ASAD M, JEPPSON KO, VOROBIEV A, BONMANN M, STAKE J