国家/地区 Japan（4）
关键词 GAN（4）
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In-situ X-ray diffraction analysis of GaN growth on graphene-covered amorphous substrates

JAPANESE JOURNAL OF APPLIED PHYSICS

FUKE S, SASAKI T, TAKAHASI M, HIBINO H

Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer

NANOTECHNOLOGY

LIUDI MULYO A, RAJPALKE MK, KUROE H, VULLUM PE, WEMAN H, FIMLAND BO, KISHINO K

GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices

IEICE TRANSACTIONS ON ELECTRONICS

OHTA J, SHON JW, UENO K, KOBAYASHI A, FUJIOKA H

RF-MBE growth and orientation control of GaN on epitaxial graphene

RESULTS IN PHYSICS

BHUIYAN AG, KAMADA Y, ISLAM MS, SYAMOTO R, ISHIMARU D, HASHIMOTO A