国家/地区 China（3）
关键词 GAN（8）
出版物
出版时间 2015（8）
机构
作者

GaN heterostructures with diamond and graphene

SEMICONDUCTOR SCIENCE TECHNOLOGY

PECZ B, TOTH L, TSIAKATOURAS G, ADIKIMENAKIS A, KOVACS A, DUCHAMP M, DUNINBORKOWSKI RE, YAKIMOVA R, NEUMANN PL, BEHMENBURG H, FOLTYNSKI B, GIESEN C, HEUKEN M, GEORGAKILAS A

Design and comparative study of lateral and vertical LEDs with graphene as current spreading layer

SUPERLATTICES MICROSTRUCTURES

PALAKURTHY S, SINGH S, PAL S, DHANAVANTRI C

Graphene GaN-Based Schottky Ultraviolet Detectors

IEEE TRANSACTIONS ON ELECTRON DEVICES

XU K, XU C, XIE YY, DENG J, ZHU YX, GUO WL, XUN M, TEO KBK, CHEN HD, SUN J

Hydride vapor phase epitaxy of GaN on self-organized patterned graphene masks

MATERIALS LETTERS

ZHAO ZD, WANG B, XU W, ZHANG HR, CHEN ZY, YU GH

Optoelectronic Properties of GaN Thin-Film Light-Emitting Diodes with Ag Nanoparticles/Multi-Layer Graphene Transparent Conductive Layer

JOURNAL OF NANOELECTRONICS OPTOELECTRONICS

CHEN LC, LIN WW, CHIOU CA

Graphene-GaN Schottky diodes

NANO RESEARCH

KIM S, SEO TH, KIM MJ, SONG KM, SUH EK, KIM H

The impact of graphene properties on GaN and AlN nucleation

SURFACE SCIENCE

AL BALUSHI ZY, MIYAGI T, LIN YC, WANG K, CALDERIN L, BHIMANAPATI G, REDWING JM, ROBINSON JA

Improving the Quality of GaN Crystals by Using Graphene or Hexagonal Boron Nitride Nanosheets Substrate

ACS APPLIED MATERIALS INTERFACES

ZHANG L, LI XL, SHAO YL, YU JX, WU YZ, HAO XP, YIN ZM, DAI YB, TIAN Y, HUO Q, SHEN YA, HUA Z, ZHANG BG