国家/地区 Usa（4）
关键词 GATE DIELECTRIC（4）
出版物
出版时间
机构 PENN STATE U.（2）
作者 CAVALERO R（2） HOLLANDER MJ（2） LABELLA M（2） ROBINSON JA（2）
SNYDER DW（2） TRUMBULL KA（2）

Integration of Hexagonal Boron Nitride with Quasi-freestanding Epitaxial Graphene: Toward Wafer-Scale, High-Performance Devices

ACS NANO

BRESNEHAN MS, HOLLANDER MJ, WETHERINGTON M, LABELLA M, TRUMBULL KA, CAVALERO R, SNYDER DW, ROBINSON JA

Enhanced Transport and Transistor Performance with Oxide Seeded High-kappa Gate Dielectrics on Wafer-Scale Epitaxial Graphene

NANO LETTERS

HOLLANDER MJ, LABELLA M, HUGHES ZR, ZHU M, TRUMBULL KA, CAVALERO R, SNYDER DW, WANG XJ, HWANG E, DATTA S, ROBINSON JA

Graphene-based Test Platform in Potential Application for FET with Guanine as Gate Dielectric

JOURNAL OF ELECTRONIC MATERIALS

WILLIAMS AD, OUCHEN F, KIM SS, NGO YH, ELHAMRI S, SIWECKI A, MOU S, CAMPO EM, KOZLOWSKI G, NAIK RR, GROTE J

Investigating the Device Performance Variation of a Buried Locally Gated Al/Al2O3 Graphene Field-Effect Transistor Process

APPLIED SCIENCESBASEL

HUANG TJ, ANKOLEKAR A, PACHECOSANCHEZ A, PUCHADES I