国家/地区 China（4）
关键词 GFET（4）
出版物 NANOTECHNOLOGY（2）
出版时间
机构
作者

Low-voltage graphene field-effect transistors based on octadecylphosphonic acid modified solution-processed high-k dielectrics

NANOTECHNOLOGY

ZHOU S, SU YR, XIAO YB, ZHAO N, XU JB, WONG CP

Phase Shift Induced by Gate-Controlled Quantum Capacitance in Graphene

IEEE ELECTRON DEVICE LETTERS

LI JQ, MAO XR, GU XW, XIE S, GENG ZX, CHEN HD

Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics

MATERIALS

HU GL, SHEN YC, SHEN L, MA CR, LIU M

A highly tunable photoelectric response of graphene field-effect transistor with lateral P-N junction in channel

NANOTECHNOLOGY

ZHANG YT, WANG Z, ZHANG GH, WANG XL, HAN CY, LI X, LIU WH