国家/地区 China（2）
关键词 GNRFET（2）
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Numerical study on the performance metrics of lightly doped drain and source graphene nanoribbon field effect transistors with double-material-gate

SUPERLATTICES MICROSTRUCTURES

WANG W, YANG X, LI N, ZHANG L, ZHANG T, YUE GS

Electronic transport properties of B/N/P co-doped armchair graphene nanoribbon field effect transistor

DIAMOND RELATED MATERIALS

WEN RL, JIANG ZH, MIAO R, WANG L, LIANG YJ, DENG JG, SHAO QY, ZHANG J