国家/地区 Spain（6）
关键词 GRAPHENE（9）
出版物 IEEE TRANSACTIONS O.（3）
出版时间 2016（2） 2020（2）
机构 UNIV AUTONOM.（5）
作者 PASADAS F（9）

Non-Quasi-Static Effects in Graphene Field-Effect Transistors Under High-Frequency Operation

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

A Graphene Field-Effect Transistor Based Analogue Phase Shifter for High-Frequency Applications

IEEE ACCESS

MEDINARULL A, PASADAS F, MARIN EG, TORALLOPEZ A, CUESTA J, GODOY A, JIMENEZ D, RUIZ FG

Large-Signal Model of the Metal-Insulator-Graphene Diode Targeting RF Applications

IEEE ELECTRON DEVICE LETTERS

PASADAS F, SAEED M, HAMED A, WANG ZX, NEGRA R, NEUMAIER D, JIMENEZ D

Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor

NANOTECHNOLOGY

FEIJOO PC, PASADAS F, IGLESIAS JM, MARTIN MJ, RENGEL R, LI CF, KIM W, RIIKONEN J, LIPSANEN H, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part I: Compact Modeling of GFET Intrinsic Capacitances

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Large-Signal Model of Graphene Field-Effect Transistors-Part II: Circuit Performance Benchmarking

IEEE TRANSACTIONS ON ELECTRON DEVICES

PASADAS F, JIMENEZ D

Graphene-on-Silicon Hybrid Field-Effect Transistors

ADVANCED ELECTRONIC MATERIALS

FOMIN M, PASADAS F, MARIN EG, MEDINARULL A, RUIZ FG, GODOY A, ZADOROZHNYI I, BELTRAMO G, BRINGS F, VITUSEVICH S, OFFENHAEUSSER A, KIREEV D

Sensitivity analysis of a Graphene Field-Effect Transistors by means of Design of Experiments

MATHEMATICS COMPUTERS IN SIMULATION

SPINELLI G, LAMBERTI P, TUCCI V, PASADAS F, JIMENEZ D

Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors

ADVANCED MATERIALS

PASADAS F, FEIJOO PC, MAVREDAKIS N, PACHECOSANCHEZ A, CHAVES FA, JIMENEZ D