国家/地区 England（5）
关键词 GRAPHENE（7）
出版物 2D MATERIALS（2）
出版时间 2016（3） 2017（3）
机构 UNIV CAMBRID.（4）
作者 SAGADE AA（7）

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

NANOTECHNOLOGY

CABREROVILATELA A, ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, BRAEUNINGERWEIMER P, MARTIN MB, WEATHERUP RS, HOFMANN S

Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal

ANNALEN DER PHYSIK

SHAYGAN M, OTTO M, SAGADE AA, CHAVARIN CA, BACHER G, MERTIN W, NEUMAIER D

Encapsulation of graphene transistors and vertical device integration by interface engineering with atomic layer deposited oxide

2D MATERIALS

ALEXANDERWEBBER JA, SAGADE AA, ARIA AI, VAN VELDHOVEN ZA, BRAEUNINGERWEIMER P, WANG RZ, CABREROVILATELA A, MARTIN MB, SUI JG, CONNOLLY MR, HOFMANN S

Electronic properties of CVD graphene: The role of grain boundaries, atmospheric doping, and encapsulation by ALD

PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS

VAN VELDHOVEN ZA, ALEXANDERWEBBER JA, SAGADE AA, BRAEUNINGERWEIMER P, HOFMANN S

Parameter Space of Atomic Layer Deposition of Ultrathin Oxides on Graphene

ACS APPLIED MATERIALS INTERFACES

ARIA AI, NAKANISHI K, XIAO L, BRAEUNINGERWEIMER P, SAGADE AA, ALEXANDERWEBBER JA, HOFMANN S

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

SENSORS

WILLIAMS JOD, ALEXANDERWEBBER JA, LAPINGTON JS, ROY M, HUTCHINSON IB, SAGADE AA, MARTIN MB, BRAEUNINGERWEIMER P, CABREROVILATELA A, WANG RZ, DE LUCA A, UDREA F, HOFMANN S

A physics-based model of gate-tunable metal-graphene contact resistance benchmarked against experimental data

2D MATERIALS

CHAVES FA, JIMENEZ D, SAGADE AA, KIM W, RIIKONEN J, LIPSANEN H, NEUMAIER D