国家/地区 Singapore（6） China（2）
关键词 GRAPHENE（8）
出版物 ACS APPLIED MATERIA.（2）
出版时间 2012（3） 2013（2）
机构 NATL UNIV SI.（6） FUDAN UNIV（2）
作者 WEE ATS（8）

Graphene Field-Effect Transistors on Hexagonal-Boron Nitride for Enhanced Interfacial Thermal Dissipation

ADVANCED ELECTRONIC MATERIALS

LIU DH, CHEN XS, ZHANG Y, WANG DG, ZHAO Y, PENG HS, LIU YQ, XU XF, WEE ATS, WEI DC

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices

ANGEWANDTE CHEMIEINTERNATIONAL EDITION

WEI DC, LU YH, HAN C, NIU TC, CHEN W, WEE ATS

Manipulating the electronic and chemical properties of graphene via molecular functionalization

PROGRESS IN SURFACE SCIENCE

MAO HY, LU YH, LIN JD, ZHONG S, WEE ATS, CHEN W

Anomalous scaling behaviour of cobalt cluster size distributions on graphite, epitaxial graphene and carbon-rich (6 root 3 x 6 root 3)R30 degrees

SURFACE SCIENCE

POON SW, WEE ATS, TOK ES

CVD Graphene as Interfacial Layer to Engineer the Organic Donor Acceptor Heterojunction Interface Properties

ACS APPLIED MATERIALS INTERFACES

ZHONG S, ZHONG JQ, MAO HY, WANG R, WANG Y, QI DC, LOH KP, WEE ATS, CHEN ZK, CHEN W

Photoresponse in epitaxial graphene with asymmetric metal contacts

APPLIED PHYSICS LETTERS

SINGH RS, NALLA V, CHEN W, JI W, WEE ATS

Amorphous Molybdenum Sulfide on Graphene-Carbon Nanotube Hybrids as Highly Active Hydrogen Evolution Reaction Catalysts

ACS APPLIED MATERIALS INTERFACES

PHAM KC, CHANG YH, MCPHAIL DS, MATTEVI C, WEE ATS, CHUA DHC

Low Temperature Critical Growth of High Quality Nitrogen Doped Graphene on Dielectrics by Plasma-Enhanced Chemical Vapor Deposition

ACS NANO

WEI DC, PENG L, LI ML, MAO HY, NIU TC, HAN C, CHEN W, WEE ATS