国家/地区 Germany（8）
关键词 GRAPHENE（8）
出版物
出版时间 2019（3） 2020（3）
机构 RHEIN WESTFAL TH AACHEN（8）
作者 LEMME MC（8）

Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene

ACS APPLIED ELECTRONIC MATERIALS

WITTMANN S, AUMER F, WITTMANN D, PINDL S, WAGNER S, GAHOI A, REATO E, BELETE M, KATARIA S, LEMME MC

Capacitance-Voltage (C-V ) Characterization of Graphene-Silicon Heterojunction Photodiodes

ADVANCED OPTICAL MATERIALS

RIAZIMEHR S, BELETE M, KATARIA S, ENGSTROM O, LEMME MC

Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

ACS APPLIED MATERIALS INTERFACES

BELETE M, ENGSTROM O, VAZIRI S, LIPPERT G, LUKOSIUS M, KATARIA S, LEMME MC

Graphene Membranes for Hall Sensors and Microphones Integrated with CMOS-Compatible Processes

ACS APPLIED NANO MATERIALS

WITTMANN S, GLACER C, WAGNER S, PINDL S, LEMME MC

Accurate Graphene-Metal Junction Characterization

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY

KONIG M, RUHL G, GAHOI A, WITTMANN S, PREIS T, BATKE JM, COSTINA I, LEMME MC

High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

ACS PHOTONICS

RIAZIMEHR S, KATARIA S, GONZALEZMEDINA JM, WAGNER S, SHAYGAN M, SUCKOW S, RUIZ FG, ENGSTROM O, GODOY A, LEMME MC

All CVD Boron Nitride Encapsulated Graphene FETs With CMOS Compatible Metal Edge Contacts

IEEE TRANSACTIONS ON ELECTRON DEVICES

PANDEY H, SHAYGAN M, SAWALLICH S, KATARIA S, ZHENXING W, NOCULAK A, OTTO M, NAGEL M, NEGRA R, NEUMAIER D, LEMME MC

Bistability and Oscillatory Motion of Natural Nanomembranes Appearing within Monolayer Graphene on Silicon Dioxide

NANO LETTERS

MASHOFF T, PRATZER M, GERINGER V, ECHTERMEYER TJ, LEMME MC, LIEBMANN M, MORGENSTERN M