国家/地区 Italy（10）
关键词 GRAPHENE（10）
出版物 IEEE ELECTRON DEVIC.（3） IEEE TRANSACTIONS O.（2）
出版时间 2013（2） 2014（2）
机构 UNIV PISA（9）
作者 FIORI G（10）

On Transport in Vertical Graphene Heterostructures

IEEE ELECTRON DEVICE LETTERS

ZHANG Q, FIORI G, IANNACCONE G

Bilayer Graphene Transistors for Analog Electronics

IEEE TRANSACTIONS ON ELECTRON DEVICES

FIORI G, NEUMAIER D, SZAFRANEK BN, IANNACCONE G

Multiscale Modeling for Graphene-Based Nanoscale Transistors

PROCEEDINGS OF THE IEEE

FIORI G, IANNACCONE G

Very Large Current Modulation in Vertical Heterostructure Graphene/hBN Transistors

IEEE TRANSACTIONS ON ELECTRON DEVICES

FIORI G, BRUZZONE S, IANNACCONE G

Lateral Graphene-hBCN Heterostructures as a Platform for Fully Two-Dimensional Transistors

ACS NANO

FIORI G, BETTI A, BRUZZONE S, IANNACCONE G

Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride

APPLIED PHYSICS LETTERS

BRUZZONE S, FIORI G

On the Possibility of Tunable-Gap Bilayer Graphene FET

IEEE ELECTRON DEVICE LETTERS

FIORI G, IANNACCONE G

Simulation of graphene nanoribbon field-effect transistors

IEEE ELECTRON DEVICE LETTERS

FIORI G, IANNACCONE G

Carrier density dependence of 1/f noise in graphene explained as a result of the interplay between band-structure and inhomogeneities

JOURNAL OF STATISTICAL MECHANICSTHEORY EXPERIMENT

PELLEGRINI B, MARCONCINI P, MACUCCI M, FIORI G, BASSO G

Can graphene outperform indium tin oxide as transparent electrode in organic solar cells?

2D MATERIALS

PALETTI P, PAWAR R, ULISSE G, BRUNETTI F, IANNACCONE G, FIORI G